Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / MMFT2N02ELT1
Herstellerteilenummer | MMFT2N02ELT1 |
---|---|
Zukünftige Teilenummer | FT-MMFT2N02ELT1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
MMFT2N02ELT1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.6A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 800mA, 5V |
Vgs (th) (Max) @ Id | 2V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 20nC @ 5V |
Vgs (Max) | ±15V |
Eingangskapazität (Ciss) (Max) @ Vds | 580pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 800mW (Ta) |
Betriebstemperatur | -65°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-223 |
Paket / fall | TO-261-4, TO-261AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
MMFT2N02ELT1 Gewicht | kontaktiere uns |
Ersatzteilnummer | MMFT2N02ELT1-FT |
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