Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / N0604N-S19-AY
Herstellerteilenummer | N0604N-S19-AY |
---|---|
Zukünftige Teilenummer | FT-N0604N-S19-AY |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
N0604N-S19-AY Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 82A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 41A, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 75nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 4150pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 1.5W (Ta), 156W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220 Isolated Tab |
Paket / fall | TO-220-3 Isolated Tab |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
N0604N-S19-AY Gewicht | kontaktiere uns |
Ersatzteilnummer | N0604N-S19-AY-FT |
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