Herstellerteilenummer | NDS331N |
---|---|
Zukünftige Teilenummer | FT-NDS331N |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NDS331N Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 1.3A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 1.5A, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 5nC @ 4.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 162pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 500mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SuperSOT-3 |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NDS331N Gewicht | kontaktiere uns |
Ersatzteilnummer | NDS331N-FT |
SI1417EDH-T1-E3
Vishay Siliconix
SI1417EDH-T1-GE3
Vishay Siliconix
SI1419DH-T1-E3
Vishay Siliconix
SI1422DH-T1-GE3
Vishay Siliconix
SI1424EDH-T1-GE3
Vishay Siliconix
SI1426DH-T1-E3
Vishay Siliconix
SI1426DH-T1-GE3
Vishay Siliconix
SI1427EDH-T1-GE3
Vishay Siliconix
SI1428EDH-T1-GE3
Vishay Siliconix
SI1433DH-T1-E3
Vishay Siliconix
XCV200-5FG256I
Xilinx Inc.
APA150-FGG256
Microsemi Corporation
M7A3P1000-FGG256I
Microsemi Corporation
A40MX04-1PL68
Microsemi Corporation
EP1M350F780C6
Intel
LCMXO2-2000HE-6FTG256C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484I
Lattice Semiconductor Corporation
10AX066H1F34I1SG
Intel
EP1C6Q240C7N
Intel
EP1K100QC208-1GZ
Intel