Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / NSVIMD10AMT1G
Herstellerteilenummer | NSVIMD10AMT1G |
---|---|
Zukünftige Teilenummer | FT-NSVIMD10AMT1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
NSVIMD10AMT1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 500mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 13 kOhms, 130 Ohms |
Widerstand - Emitterbasis (R2) | 10 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 100 @ 1mA, 5V / 68 @ 100mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 1mA, 10mA |
Strom - Kollektorabschaltung (max.) | 500nA |
Frequenz - Übergang | - |
Leistung max | 285mW |
Befestigungsart | Surface Mount |
Paket / fall | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | SC-74R |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVIMD10AMT1G Gewicht | kontaktiere uns |
Ersatzteilnummer | NSVIMD10AMT1G-FT |
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