Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NTD4856N-1G

| Herstellerteilenummer | NTD4856N-1G |
|---|---|
| Zukünftige Teilenummer | FT-NTD4856N-1G |
| SPQ / MOQ | kontaktiere uns |
| Verpackungsmaterial | Reel/Tray/Tube/Others |
| Serie | - |
| NTD4856N-1G Status (Lebenszyklus) | Auf Lager |
| Teilestatus | Obsolete |
| FET-Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung (Vdss) | 25V |
| Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 13.3A (Ta), 89A (Tc) |
| Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 30A, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA |
| Gateladung (Qg) (Max) @ Vgs | 27nC @ 4.5V |
| Vgs (Max) | ±20V |
| Eingangskapazität (Ciss) (Max) @ Vds | 2241pF @ 12V |
| FET-Funktion | - |
| Verlustleistung (max.) | 1.33W (Ta), 60W (Tc) |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Befestigungsart | Through Hole |
| Supplier Device Package | I-PAK |
| Paket / fall | TO-251-3 Short Leads, IPak, TO-251AA |
| Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
| NTD4856N-1G Gewicht | kontaktiere uns |
| Ersatzteilnummer | NTD4856N-1G-FT |

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