Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NTD5C648NLT4G
Herstellerteilenummer | NTD5C648NLT4G |
---|---|
Zukünftige Teilenummer | FT-NTD5C648NLT4G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NTD5C648NLT4G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 22A (Ta), 91A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.1 mOhm @ 45A, 10V |
Vgs (th) (Max) @ Id | 2.1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 17nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2900pF @ 30V |
FET-Funktion | - |
Verlustleistung (max.) | 4.4W (Ta), 76W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | DPAK (SINGLE GAUGE) |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTD5C648NLT4G Gewicht | kontaktiere uns |
Ersatzteilnummer | NTD5C648NLT4G-FT |
5HN01M-TL-H
ON Semiconductor
5HP01M-TL-E
ON Semiconductor
5HP01M-TL-H
ON Semiconductor
5LN01M-TL-E
ON Semiconductor
5LN01M-TL-H
ON Semiconductor
5LP01M-TL-E
ON Semiconductor
5LP01M-TL-H
ON Semiconductor
5LP01M-TL-HX
ON Semiconductor
MMBF2201NT1
ON Semiconductor
MMBF2202PT1
ON Semiconductor
A40MX02-VQG80M
Microsemi Corporation
EX128-PTQG64
Microsemi Corporation
5SGXEA7N1F40C2
Intel
EP4SGX530KF43C3
Intel
A40MX04-3PLG44
Microsemi Corporation
XC5VLX220T-1FFG1738I
Xilinx Inc.
LFEC6E-5F256C
Lattice Semiconductor Corporation
EPF10K50SBC356-2
Intel
EP20K60EFC324-1
Intel
EP2S60F1020C5
Intel