Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NTDV5805NT4G
Herstellerteilenummer | NTDV5805NT4G |
---|---|
Zukünftige Teilenummer | FT-NTDV5805NT4G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NTDV5805NT4G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 51A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 80nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1725pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | - |
Betriebstemperatur | - |
Befestigungsart | Surface Mount |
Supplier Device Package | DPAK |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTDV5805NT4G Gewicht | kontaktiere uns |
Ersatzteilnummer | NTDV5805NT4G-FT |
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