Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / NTHC5513T1G
Herstellerteilenummer | NTHC5513T1G |
---|---|
Zukünftige Teilenummer | FT-NTHC5513T1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NTHC5513T1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N and P-Channel |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.9A, 2.2A |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 2.9A, 4.5V |
Vgs (th) (Max) @ Id | 1.2V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 4nC @ 4.5V |
Eingangskapazität (Ciss) (Max) @ Vds | 180pF @ 10V |
Leistung max | 1.1W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 8-SMD, Flat Lead |
Supplier Device Package | ChipFET™ |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTHC5513T1G Gewicht | kontaktiere uns |
Ersatzteilnummer | NTHC5513T1G-FT |
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