Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NTHS4101PT1G
Herstellerteilenummer | NTHS4101PT1G |
---|---|
Zukünftige Teilenummer | FT-NTHS4101PT1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NTHS4101PT1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 4.8A (Tj) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 4.8A, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 35nC @ 4.5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 2100pF @ 16V |
FET-Funktion | - |
Verlustleistung (max.) | 1.3W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | ChipFET™ |
Paket / fall | 8-SMD, Flat Lead |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTHS4101PT1G Gewicht | kontaktiere uns |
Ersatzteilnummer | NTHS4101PT1G-FT |
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