Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NTLJF3118NTBG
Herstellerteilenummer | NTLJF3118NTBG |
---|---|
Zukünftige Teilenummer | FT-NTLJF3118NTBG |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NTLJF3118NTBG Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.6A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.8A, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 3.7nC @ 4.5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 271pF @ 10V |
FET-Funktion | Schottky Diode (Isolated) |
Verlustleistung (max.) | 700mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 6-WDFN (2x2) |
Paket / fall | 6-WDFN Exposed Pad |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTLJF3118NTBG Gewicht | kontaktiere uns |
Ersatzteilnummer | NTLJF3118NTBG-FT |
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