Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NTMFS4H01NFT1G
Herstellerteilenummer | NTMFS4H01NFT1G |
---|---|
Zukünftige Teilenummer | FT-NTMFS4H01NFT1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NTMFS4H01NFT1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 25V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 54A (Ta), 334A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 0.7 mOhm @ 30A, 10V |
Vgs (th) (Max) @ Id | 2.1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 82nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 5538pF @ 12V |
FET-Funktion | - |
Verlustleistung (max.) | 3.2W (Ta), 125W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Paket / fall | 8-PowerTDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTMFS4H01NFT1G Gewicht | kontaktiere uns |
Ersatzteilnummer | NTMFS4H01NFT1G-FT |
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