Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NTP8G202NG
Herstellerteilenummer | NTP8G202NG |
---|---|
Zukünftige Teilenummer | FT-NTP8G202NG |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NTP8G202NG Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | GaNFET (Gallium Nitride) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 9A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 8V |
Rds On (Max) @ Id, Vgs | 350 mOhm @ 5.5A, 8V |
Vgs (th) (Max) @ Id | 2.6V @ 500µA |
Gateladung (Qg) (Max) @ Vgs | 9.3nC @ 4.5V |
Vgs (Max) | ±18V |
Eingangskapazität (Ciss) (Max) @ Vds | 760pF @ 400V |
FET-Funktion | - |
Verlustleistung (max.) | 65W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220-3 |
Paket / fall | TO-220-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTP8G202NG Gewicht | kontaktiere uns |
Ersatzteilnummer | NTP8G202NG-FT |
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