Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NTTS2P03R2G
Herstellerteilenummer | NTTS2P03R2G |
---|---|
Zukünftige Teilenummer | FT-NTTS2P03R2G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NTTS2P03R2G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.1A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 2.48A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 22nC @ 4.5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 500pF @ 24V |
FET-Funktion | - |
Verlustleistung (max.) | 600mW (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | Micro8™ |
Paket / fall | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTTS2P03R2G Gewicht | kontaktiere uns |
Ersatzteilnummer | NTTS2P03R2G-FT |
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