Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NVATS5A113PLZT4G
Herstellerteilenummer | NVATS5A113PLZT4G |
---|---|
Zukünftige Teilenummer | FT-NVATS5A113PLZT4G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NVATS5A113PLZT4G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 38A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 29.5 mOhm @ 18A, 10V |
Vgs (th) (Max) @ Id | 2.6V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 55nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2400pF @ 20V |
FET-Funktion | - |
Verlustleistung (max.) | 60W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | ATPAK |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NVATS5A113PLZT4G Gewicht | kontaktiere uns |
Ersatzteilnummer | NVATS5A113PLZT4G-FT |
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