Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NVD5C478NLT4G
Herstellerteilenummer | NVD5C478NLT4G |
---|---|
Zukünftige Teilenummer | FT-NVD5C478NLT4G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
NVD5C478NLT4G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 14A (Ta), 45A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 7.7 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 30µA |
Gateladung (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1100pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3W (Ta), 30W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | DPAK (SINGLE GAUGE) |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NVD5C478NLT4G Gewicht | kontaktiere uns |
Ersatzteilnummer | NVD5C478NLT4G-FT |
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