Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / NVMD6N04R2G
Herstellerteilenummer | NVMD6N04R2G |
---|---|
Zukünftige Teilenummer | FT-NVMD6N04R2G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NVMD6N04R2G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 4.6A |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 5.8A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 30nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 900pF @ 32V |
Leistung max | 1.29W |
Betriebstemperatur | - |
Befestigungsart | Surface Mount |
Paket / fall | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NVMD6N04R2G Gewicht | kontaktiere uns |
Ersatzteilnummer | NVMD6N04R2G-FT |
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