Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NVMFS5830NLWFT3G
Herstellerteilenummer | NVMFS5830NLWFT3G |
---|---|
Zukünftige Teilenummer | FT-NVMFS5830NLWFT3G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NVMFS5830NLWFT3G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 29A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 20A, 10V |
Vgs (th) (Max) @ Id | 2.4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 113nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 5880pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.8W (Ta), 158W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Paket / fall | 8-PowerTDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NVMFS5830NLWFT3G Gewicht | kontaktiere uns |
Ersatzteilnummer | NVMFS5830NLWFT3G-FT |
NVMFS5A140PLZT1G
ON Semiconductor
NTMFS4108NT1G
ON Semiconductor
NTMFS4108NT3G
ON Semiconductor
NTMFS4119NT1G
ON Semiconductor
NTMFS4119NT3G
ON Semiconductor
NTMFS4120NT1G
ON Semiconductor
NTMFS4120NT3G
ON Semiconductor
NTMFS4121NT1G
ON Semiconductor
NTMFS4121NT3G
ON Semiconductor
NTMFS4122NT1G
ON Semiconductor
EP1C6T144C6
Intel
LCMXO2-1200ZE-3TG144IR1
Lattice Semiconductor Corporation
A42MX09-FVQ100
Microsemi Corporation
EP4CE10E22C7N
Intel
XC5VLX30-1FF676I
Xilinx Inc.
AGL600V2-FG144
Microsemi Corporation
LCMXO2-7000HC-6BG256C
Lattice Semiconductor Corporation
LFXP2-8E-5MN132C
Lattice Semiconductor Corporation
5AGXMA1D4F31I3N
Intel
EP4CE55F29C6
Intel