Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NVMFS5C410NWFT1G
Herstellerteilenummer | NVMFS5C410NWFT1G |
---|---|
Zukünftige Teilenummer | FT-NVMFS5C410NWFT1G |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NVMFS5C410NWFT1G Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 0.92 mOhm @ 50A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 86nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 6100pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.9W (Ta), 166W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Paket / fall | 8-PowerTDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NVMFS5C410NWFT1G Gewicht | kontaktiere uns |
Ersatzteilnummer | NVMFS5C410NWFT1G-FT |
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