Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NVMFS6B05NLWFT1G

| Herstellerteilenummer | NVMFS6B05NLWFT1G |
|---|---|
| Zukünftige Teilenummer | FT-NVMFS6B05NLWFT1G |
| SPQ / MOQ | kontaktiere uns |
| Verpackungsmaterial | Reel/Tray/Tube/Others |
| Serie | Automotive, AEC-Q101 |
| NVMFS6B05NLWFT1G Status (Lebenszyklus) | Auf Lager |
| Teilestatus | Active |
| FET-Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain-Source-Spannung (Vdss) | 100V |
| Strom - kontinuierliche Entleerung (Id) bei 25 ° C | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 20A, 10V |
| Vgs (th) (Max) @ Id | 3V @ 250µA |
| Gateladung (Qg) (Max) @ Vgs | 6.8nC @ 10V |
| Vgs (Max) | ±16V |
| Eingangskapazität (Ciss) (Max) @ Vds | 3980pF @ 25V |
| FET-Funktion | - |
| Verlustleistung (max.) | 3.8W (Ta), 165W (Tc) |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Befestigungsart | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Paket / fall | 8-PowerTDFN |
| Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
| NVMFS6B05NLWFT1G Gewicht | kontaktiere uns |
| Ersatzteilnummer | NVMFS6B05NLWFT1G-FT |

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