Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NVMJS1D3N04CTWG
Herstellerteilenummer | NVMJS1D3N04CTWG |
---|---|
Zukünftige Teilenummer | FT-NVMJS1D3N04CTWG |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | Automotive, AEC-Q101 |
NVMJS1D3N04CTWG Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 41A (Ta), 235A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.3 mOhm @ 50A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 170µA |
Gateladung (Qg) (Max) @ Vgs | 65nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 4300pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.8W (Ta), 128W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-LFPAK |
Paket / fall | SOT-1205, 8-LFPAK56 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NVMJS1D3N04CTWG Gewicht | kontaktiere uns |
Ersatzteilnummer | NVMJS1D3N04CTWG-FT |
NP109N04PUK-E1-AY
Renesas Electronics America
NP109N055PUJ-E2B-AY
Renesas Electronics America
NP109N055PUK-E1-AY
Renesas Electronics America
NP110N04PUK-E1-AY
Renesas Electronics America
NP110N055PUG(1)-E1-AY
Renesas Electronics America
NP110N055PUJ-E1B-AY
Renesas Electronics America
NP110N055PUK-E1-AY
Renesas Electronics America
NP15P04SLG(2)-E1-AY
Renesas Electronics America
NP160N04TDG-E1-AY
Renesas Electronics America
NP160N04TUJ-E1-AY
Renesas Electronics America
A3PE600-2FGG484I
Microsemi Corporation
M1A3P600-2PQ208
Microsemi Corporation
LFE3-35EA-8LFTN256C
Lattice Semiconductor Corporation
AGLN060V5-ZVQ100
Microsemi Corporation
10M25DAF256C7G
Intel
EP3SE260F1152I3
Intel
LCMXO640C-4M100C
Lattice Semiconductor Corporation
EP3SE110F780C2
Intel
10AX048E2F29I1HG
Intel
EP20K60EQC208-1
Intel