Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / NVTFS5116PLTWG
Herstellerteilenummer | NVTFS5116PLTWG |
---|---|
Zukünftige Teilenummer | FT-NVTFS5116PLTWG |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
NVTFS5116PLTWG Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 6A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 7A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 25nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1258pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 3.2W (Ta), 21W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-WDFN (3.3x3.3) |
Paket / fall | 8-PowerWDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
NVTFS5116PLTWG Gewicht | kontaktiere uns |
Ersatzteilnummer | NVTFS5116PLTWG-FT |
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