Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / PHT4NQ10LT,135
Herstellerteilenummer | PHT4NQ10LT,135 |
---|---|
Zukünftige Teilenummer | FT-PHT4NQ10LT,135 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchMOS™ |
PHT4NQ10LT,135 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3.5A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 1.75A, 5V |
Vgs (th) (Max) @ Id | 2V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 12.2nC @ 5V |
Vgs (Max) | ±16V |
Eingangskapazität (Ciss) (Max) @ Vds | 374pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 6.9W (Tc) |
Betriebstemperatur | -65°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SOT-223 |
Paket / fall | TO-261-4, TO-261AA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
PHT4NQ10LT,135 Gewicht | kontaktiere uns |
Ersatzteilnummer | PHT4NQ10LT,135-FT |
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