Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / PMDXB600UNEZ
Herstellerteilenummer | PMDXB600UNEZ |
---|---|
Zukünftige Teilenummer | FT-PMDXB600UNEZ |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
PMDXB600UNEZ Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 600mA |
Rds On (Max) @ Id, Vgs | 620 mOhm @ 600mA, 4.5V |
Vgs (th) (Max) @ Id | 950mV @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
Eingangskapazität (Ciss) (Max) @ Vds | 21.3pF @ 10V |
Leistung max | 265mW |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 6-XFDFN Exposed Pad |
Supplier Device Package | DFN1010B-6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
PMDXB600UNEZ Gewicht | kontaktiere uns |
Ersatzteilnummer | PMDXB600UNEZ-FT |
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