Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / PSMN018-100ESFQ
Herstellerteilenummer | PSMN018-100ESFQ |
---|---|
Zukünftige Teilenummer | FT-PSMN018-100ESFQ |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
PSMN018-100ESFQ Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 100V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 53A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 7V, 10V |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 4V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 21.4nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 1482pF @ 50V |
FET-Funktion | - |
Verlustleistung (max.) | 111W (Ta) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | I2PAK |
Paket / fall | TO-220-3, Short Tab |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
PSMN018-100ESFQ Gewicht | kontaktiere uns |
Ersatzteilnummer | PSMN018-100ESFQ-FT |
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