Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / PSMN040-200W,127
Herstellerteilenummer | PSMN040-200W,127 |
---|---|
Zukünftige Teilenummer | FT-PSMN040-200W,127 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchMOS™ |
PSMN040-200W,127 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 200V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 50A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 25A, 10V |
Vgs (th) (Max) @ Id | 4V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 183nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 9530pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 300W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-247-3 |
Paket / fall | TO-247-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
PSMN040-200W,127 Gewicht | kontaktiere uns |
Ersatzteilnummer | PSMN040-200W,127-FT |
NVMFS5C628NLWFT3G
ON Semiconductor
NVMFS5C645NLAFT3G
ON Semiconductor
NVMFS5C645NLT1G
ON Semiconductor
NVMFS5C645NLT3G
ON Semiconductor
NVMFS5C645NLWFAFT3G
ON Semiconductor
NVMFS5C645NLWFT1G
ON Semiconductor
NVMFS5C645NLWFT3G
ON Semiconductor
NVMFS5C646NLAFT3G
ON Semiconductor
NVMFS5C646NLT1G
ON Semiconductor
NVMFS5C646NLT3G
ON Semiconductor
LFXP3C-4T144I
Lattice Semiconductor Corporation
A54SX16-VQ100
Microsemi Corporation
EP4CE40F23C6N
Intel
10AX016C4U19I3SG
Intel
5SGSED6K2F40C2N
Intel
5CGXFC7B6M15I7N
Intel
EP4SGX530KH40C3NES
Intel
5SGXEA5K1F35I2N
Intel
XC6VLX365T-1FF1156I
Xilinx Inc.
LCMXO2-7000HE-6BG332C
Lattice Semiconductor Corporation