Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / PSMN1R6-30BL,118
Herstellerteilenummer | PSMN1R6-30BL,118 |
---|---|
Zukünftige Teilenummer | FT-PSMN1R6-30BL,118 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
PSMN1R6-30BL,118 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 100A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.9 mOhm @ 25A, 10V |
Vgs (th) (Max) @ Id | 2.15V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 212nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 12493pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 306W (Tc) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | D2PAK |
Paket / fall | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
PSMN1R6-30BL,118 Gewicht | kontaktiere uns |
Ersatzteilnummer | PSMN1R6-30BL,118-FT |
PSMN004-60P,127
NXP USA Inc.
PSMN005-55P,127
NXP USA Inc.
PSMN005-75P,127
Nexperia USA Inc.
PSMN008-75P,127
NXP USA Inc.
PSMN009-100P,127
Nexperia USA Inc.
PSMN015-110P,127
Nexperia USA Inc.
PSMN017-30PL,127
Nexperia USA Inc.
PSMN030-150P,127
Nexperia USA Inc.
PSMN035-150P,127
Nexperia USA Inc.
PSMN050-80PS,127
NXP USA Inc.
LCMXO2-640HC-6TG100I
Lattice Semiconductor Corporation
XA3S400A-4FTG256I
Xilinx Inc.
A54SX72A-1FG484M
Microsemi Corporation
A3P250-1FG256
Microsemi Corporation
ICE40UP3K-UWG30ITR1K
Lattice Semiconductor Corporation
EP4SE530H35C4N
Intel
XC4VLX40-11FFG1148I
Xilinx Inc.
A3P1000-FGG144T
Microsemi Corporation
LCMXO640E-3MN100C
Lattice Semiconductor Corporation
EP1S20F780C7
Intel