Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / PSMN1R6-30MLHX
Herstellerteilenummer | PSMN1R6-30MLHX |
---|---|
Zukünftige Teilenummer | FT-PSMN1R6-30MLHX |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
PSMN1R6-30MLHX Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 160A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.9 mOhm @ 25A, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 41nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2.369nF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 106W (Ta) |
Betriebstemperatur | -55°C ~ 175°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | LFPAK33 |
Paket / fall | SOT-1210, 8-LFPAK33 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
PSMN1R6-30MLHX Gewicht | kontaktiere uns |
Ersatzteilnummer | PSMN1R6-30MLHX-FT |
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