Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / QS5U16TR
Herstellerteilenummer | QS5U16TR |
---|---|
Zukünftige Teilenummer | FT-QS5U16TR |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
QS5U16TR Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 2A, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 3.9nC @ 4.5V |
Vgs (Max) | ±12V |
Eingangskapazität (Ciss) (Max) @ Vds | 175pF @ 10V |
FET-Funktion | Schottky Diode (Isolated) |
Verlustleistung (max.) | 900mW (Ta) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TSMT5 |
Paket / fall | SOT-23-5 Thin, TSOT-23-5 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
QS5U16TR Gewicht | kontaktiere uns |
Ersatzteilnummer | QS5U16TR-FT |
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