Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / R6008FNX
Herstellerteilenummer | R6008FNX |
---|---|
Zukünftige Teilenummer | FT-R6008FNX |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
R6008FNX Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 8A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 950 mOhm @ 4A, 10V |
Vgs (th) (Max) @ Id | 4V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 580pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 50W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220FM |
Paket / fall | TO-220-3 Full Pack |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
R6008FNX Gewicht | kontaktiere uns |
Ersatzteilnummer | R6008FNX-FT |
SFR9014TF
ON Semiconductor
SFR9024TM
ON Semiconductor
SFR9034TF
ON Semiconductor
SFR9110TF
ON Semiconductor
SSR1N60BTM
ON Semiconductor
SSR1N60BTM-WS
ON Semiconductor
SSR1N60BTM_F080
ON Semiconductor
TJ10S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ15S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
TJ20S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
XCS20XL-4VQ100C
Xilinx Inc.
XC6SLX150-3FG484I
Xilinx Inc.
A42MX36-1PQG240
Microsemi Corporation
A3P1000-2FGG484I
Microsemi Corporation
XC4020E-4HQ208I
Xilinx Inc.
XC7VX690T-1FFG1930C
Xilinx Inc.
A42MX09-TQ176
Microsemi Corporation
M1A3P1000L-FGG144
Microsemi Corporation
ICE40UL1K-CM36AITR1K
Lattice Semiconductor Corporation
EP4SGX230HF35C2
Intel