Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RCD100N19TL
Herstellerteilenummer | RCD100N19TL |
---|---|
Zukünftige Teilenummer | FT-RCD100N19TL |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RCD100N19TL Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 190V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 10A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 182 mOhm @ 5A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 52nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 2000pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 850mW (Ta), 20W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | CPT3 |
Paket / fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RCD100N19TL Gewicht | kontaktiere uns |
Ersatzteilnummer | RCD100N19TL-FT |
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