Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RJK1557DPA-00#J0
Herstellerteilenummer | RJK1557DPA-00#J0 |
---|---|
Zukünftige Teilenummer | FT-RJK1557DPA-00#J0 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RJK1557DPA-00#J0 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 150V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 25A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 12.5A, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1250pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 30W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-WPAK |
Paket / fall | 8-PowerWDFN |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RJK1557DPA-00#J0 Gewicht | kontaktiere uns |
Ersatzteilnummer | RJK1557DPA-00#J0-FT |
NP89N055MUK-S18-AY
Renesas Electronics America
NP90N04MUG-S18-AY
Renesas Electronics America
RJK0601DPN-E0#T2
Renesas Electronics America
RJK0602DPN-E0#T2
Renesas Electronics America
RJK0603DPN-E0#T2
Renesas Electronics America
RJK0703DPN-E0#T2
Renesas Electronics America
RJK1002DPN-E0#T2
Renesas Electronics America
RJK0651DPB-00#J5
Renesas Electronics America
HAT2168H-EL-E
Renesas Electronics America
RJK0455DPB-00#J5
Renesas Electronics America
A54SX16A-2TQ144I
Microsemi Corporation
XC3S400-4FG320I
Xilinx Inc.
XC3S700AN-4FGG484I
Xilinx Inc.
5SGXMA3E1H29I2N
Intel
5SGSMD8N3F45I3N
Intel
5SGXMA4H3F35I4N
Intel
XC5VLX155-2FFG1760C
Xilinx Inc.
XC6VLX195T-2FFG784C
Xilinx Inc.
XC6VLX195T-2FFG784I
Xilinx Inc.
LCMXO2280E-4MN132I
Lattice Semiconductor Corporation