Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RJK6012DPP-E0#T2
Herstellerteilenummer | RJK6012DPP-E0#T2 |
---|---|
Zukünftige Teilenummer | FT-RJK6012DPP-E0#T2 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RJK6012DPP-E0#T2 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Discontinued at Future Semiconductor |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 600V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 10A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 920 mOhm @ 5A, 10V |
Vgs (th) (Max) @ Id | - |
Gateladung (Qg) (Max) @ Vgs | 30nC @ 10V |
Vgs (Max) | ±30V |
Eingangskapazität (Ciss) (Max) @ Vds | 1100pF @ 25V |
FET-Funktion | - |
Verlustleistung (max.) | 30W (Tc) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Through Hole |
Supplier Device Package | TO-220FP |
Paket / fall | TO-220-3 Full Pack |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RJK6012DPP-E0#T2 Gewicht | kontaktiere uns |
Ersatzteilnummer | RJK6012DPP-E0#T2-FT |
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