Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - Bipolar (BJT) - Arrays, vorgespannt / RN1909(T5L,F,T)
Herstellerteilenummer | RN1909(T5L,F,T) |
---|---|
Zukünftige Teilenummer | FT-RN1909(T5L,F,T) |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RN1909(T5L,F,T) Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
Transistortyp | 2 NPN - Pre-Biased (Dual) |
Stromabnehmer (Ic) (max.) | 100mA |
Spannung - Durchschlag Kollektoremitter (max.) | 50V |
Widerstand - Basis (R1) | 47 kOhms |
Widerstand - Emitterbasis (R2) | 22 kOhms |
Gleichstromverstärkung (hFE) (min) bei Ic, Vce | 70 @ 10mA, 5V |
Vce-Sättigung (max.) @ Ib, Ic | 300mV @ 250µA, 5mA |
Strom - Kollektorabschaltung (max.) | 100nA (ICBO) |
Frequenz - Übergang | 250MHz |
Leistung max | 200mW |
Befestigungsart | Surface Mount |
Paket / fall | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1909(T5L,F,T) Gewicht | kontaktiere uns |
Ersatzteilnummer | RN1909(T5L,F,T)-FT |
RN2901FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2911FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1906FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN1910FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN1961FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1962FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1963FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1964FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1965FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1967FE(TE85L,F)
Toshiba Semiconductor and Storage
XC2VP50-5FF1517C
Xilinx Inc.
XC3S2000-4FGG456C
Xilinx Inc.
APA600-PQ208
Microsemi Corporation
5SGXEB6R2F43C3
Intel
EP2SGX60EF1152C3N
Intel
A1010B-PLG44C
Microsemi Corporation
XC4028EX-2HQ208C
Xilinx Inc.
XC4VFX60-11FFG1152I
Xilinx Inc.
LFE3-95EA-8LFN1156C
Lattice Semiconductor Corporation
LFXP2-40E-6FN484C
Lattice Semiconductor Corporation