Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RQ6E055BNTCR
Herstellerteilenummer | RQ6E055BNTCR |
---|---|
Zukünftige Teilenummer | FT-RQ6E055BNTCR |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RQ6E055BNTCR Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 5.5A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 5.5A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 8.6nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 355pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 1.25W (Ta) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | TSMT6 (SC-95) |
Paket / fall | SOT-23-6 Thin, TSOT-23-6 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RQ6E055BNTCR Gewicht | kontaktiere uns |
Ersatzteilnummer | RQ6E055BNTCR-FT |
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