Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RUM003N02T2L
Herstellerteilenummer | RUM003N02T2L |
---|---|
Zukünftige Teilenummer | FT-RUM003N02T2L |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RUM003N02T2L Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 300mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4V |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 300mA, 4V |
Vgs (th) (Max) @ Id | 1V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 25pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 150mW (Ta) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | VMT3 |
Paket / fall | SOT-723 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RUM003N02T2L Gewicht | kontaktiere uns |
Ersatzteilnummer | RUM003N02T2L-FT |
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