Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RW1E025RPT2CR
Herstellerteilenummer | RW1E025RPT2CR |
---|---|
Zukünftige Teilenummer | FT-RW1E025RPT2CR |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RW1E025RPT2CR Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 2.5A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 2.5A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 5.2nC @ 5V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 480pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 700mW (Ta) |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 6-WEMT |
Paket / fall | SOT-563, SOT-666 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RW1E025RPT2CR Gewicht | kontaktiere uns |
Ersatzteilnummer | RW1E025RPT2CR-FT |
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