Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / RYC002N05T316
Herstellerteilenummer | RYC002N05T316 |
---|---|
Zukünftige Teilenummer | FT-RYC002N05T316 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
RYC002N05T316 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 50V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 200mA (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V |
Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 200mA, 4.5V |
Vgs (th) (Max) @ Id | 800mV @ 1mA |
Gateladung (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | 26pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 350mW (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | SST3 |
Paket / fall | TO-236-3, SC-59, SOT-23-3 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
RYC002N05T316 Gewicht | kontaktiere uns |
Ersatzteilnummer | RYC002N05T316-FT |
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