Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SH8M2TB1
Herstellerteilenummer | SH8M2TB1 |
---|---|
Zukünftige Teilenummer | FT-SH8M2TB1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
SH8M2TB1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Not For New Designs |
FET-Typ | N and P-Channel |
FET-Funktion | Standard |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 3.5A |
Rds On (Max) @ Id, Vgs | 83 mOhm @ 3.5A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 1mA |
Gateladung (Qg) (Max) @ Vgs | 3.5nC @ 5V |
Eingangskapazität (Ciss) (Max) @ Vds | 140pF @ 10V |
Leistung max | 2W |
Betriebstemperatur | 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOP |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SH8M2TB1 Gewicht | kontaktiere uns |
Ersatzteilnummer | SH8M2TB1-FT |
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