Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SI3552DV-T1-GE3
Herstellerteilenummer | SI3552DV-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SI3552DV-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI3552DV-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N and P-Channel |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | - |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 2.5A, 10V |
Vgs (th) (Max) @ Id | 1V @ 250µA (Min) |
Gateladung (Qg) (Max) @ Vgs | 3.2nC @ 5V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
Leistung max | 1.15W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI3552DV-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI3552DV-T1-GE3-FT |
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