Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI4453DY-T1-GE3
Herstellerteilenummer | SI4453DY-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SI4453DY-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI4453DY-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 12V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 10A (Ta) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 14A, 4.5V |
Vgs (th) (Max) @ Id | 900mV @ 600µA |
Gateladung (Qg) (Max) @ Vgs | 165nC @ 5V |
Vgs (Max) | ±8V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
FET-Funktion | - |
Verlustleistung (max.) | 1.5W (Ta) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 8-SO |
Paket / fall | 8-SOIC (0.154", 3.90mm Width) |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI4453DY-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI4453DY-T1-GE3-FT |
RSS090P03FU7TB
Rohm Semiconductor
RSS090P03TB
Rohm Semiconductor
RSS095N05FU6TB
Rohm Semiconductor
RSS100N03FU6TB
Rohm Semiconductor
RSS100N03TB
Rohm Semiconductor
RSS105N03FU6TB
Rohm Semiconductor
RSS105N03TB
Rohm Semiconductor
RSS110N03FU6TB
Rohm Semiconductor
RSS110N03TB
Rohm Semiconductor
RSS120N03FU6TB
Rohm Semiconductor
LCMXO2-640HC-4SG48C
Lattice Semiconductor Corporation
A54SX32A-1TQG144
Microsemi Corporation
XC6SLX75T-4FGG484C
Xilinx Inc.
A3P600L-1FGG484
Microsemi Corporation
MPF300T-FCG1152E
Microsemi Corporation
A40MX04-FPL68
Microsemi Corporation
AGLN250V5-VQ100I
Microsemi Corporation
5SGXMA7N2F45C3N
Intel
LFXP6E-3Q208C
Lattice Semiconductor Corporation
5SGSMD4H3F35C4N
Intel