Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SI4900DY-T1-GE3
Herstellerteilenummer | SI4900DY-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SI4900DY-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI4900DY-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 60V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 5.3A |
Rds On (Max) @ Id, Vgs | 58 mOhm @ 4.3A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 20nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 665pF @ 15V |
Leistung max | 3.1W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI4900DY-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI4900DY-T1-GE3-FT |
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