Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SI6968BEDQ-T1-GE3
Herstellerteilenummer | SI6968BEDQ-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SI6968BEDQ-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI6968BEDQ-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | 2 N-Channel (Dual) Common Drain |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 5.2A |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 6.5A, 4.5V |
Vgs (th) (Max) @ Id | 1.6V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 18nC @ 4.5V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
Leistung max | 1W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI6968BEDQ-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI6968BEDQ-T1-GE3-FT |
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