Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI8425DB-T1-E1
Herstellerteilenummer | SI8425DB-T1-E1 |
---|---|
Zukünftige Teilenummer | FT-SI8425DB-T1-E1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI8425DB-T1-E1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | - |
Antriebsspannung (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 2A, 4.5V |
Vgs (th) (Max) @ Id | 900mV @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 110nC @ 10V |
Vgs (Max) | ±10V |
Eingangskapazität (Ciss) (Max) @ Vds | 2800pF @ 10V |
FET-Funktion | - |
Verlustleistung (max.) | 1.1W (Ta), 2.7W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 4-WLCSP (1.6x1.6) |
Paket / fall | 4-UFBGA, WLCSP |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI8425DB-T1-E1 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI8425DB-T1-E1-FT |
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