Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SI8429DB-T1-E1
Herstellerteilenummer | SI8429DB-T1-E1 |
---|---|
Zukünftige Teilenummer | FT-SI8429DB-T1-E1 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SI8429DB-T1-E1 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | P-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 8V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 11.7A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 1A, 4.5V |
Vgs (th) (Max) @ Id | 800mV @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 26nC @ 5V |
Vgs (Max) | ±5V |
Eingangskapazität (Ciss) (Max) @ Vds | 1640pF @ 4V |
FET-Funktion | - |
Verlustleistung (max.) | 2.77W (Ta), 6.25W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | 4-Microfoot |
Paket / fall | 4-XFBGA, CSPBGA |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SI8429DB-T1-E1 Gewicht | kontaktiere uns |
Ersatzteilnummer | SI8429DB-T1-E1-FT |
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