Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SIA911EDJ-T1-GE3
Herstellerteilenummer | SIA911EDJ-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIA911EDJ-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SIA911EDJ-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | 2 P-Channel (Dual) |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 4.5A |
Rds On (Max) @ Id, Vgs | 101 mOhm @ 2.7A, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 11nC @ 8V |
Eingangskapazität (Ciss) (Max) @ Vds | - |
Leistung max | 7.8W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | PowerPAK® SC-70-6 Dual |
Supplier Device Package | PowerPAK® SC-70-6 Dual |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIA911EDJ-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIA911EDJ-T1-GE3-FT |
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