Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - Arrays / SIA917DJ-T1-GE3
Herstellerteilenummer | SIA917DJ-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIA917DJ-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SIA917DJ-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Obsolete |
FET-Typ | 2 P-Channel (Dual) |
FET-Funktion | Logic Level Gate |
Drain-Source-Spannung (Vdss) | 20V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 4.5A |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 2.5A, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 9nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 250pF @ 10V |
Leistung max | 6.5W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Paket / fall | PowerPAK® SC-70-6 Dual |
Supplier Device Package | PowerPAK® SC-70-6 Dual |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIA917DJ-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIA917DJ-T1-GE3-FT |
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