Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SIR820DP-T1-GE3
Herstellerteilenummer | SIR820DP-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIR820DP-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | - |
SIR820DP-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 40A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 2.4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 95nC @ 10V |
Vgs (Max) | ±20V |
Eingangskapazität (Ciss) (Max) @ Vds | 3512pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 37.8W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Paket / fall | PowerPAK® SO-8 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIR820DP-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIR820DP-T1-GE3-FT |
RJK2055DPA-WS#J0
Renesas Electronics America
RJK2057DPA-WS#J0
Renesas Electronics America
RJK2555DPA-WS#J0
Renesas Electronics America
RJK2557DPA-WS#J0
Renesas Electronics America
RJK4006DPD-WS#J2
Renesas Electronics America
RJK4532DPD-E0#J2
Renesas Electronics America
RJK5006DPD-WS#J2
Renesas Electronics America
RJK5015DPK-00#T0
Renesas Electronics America
RJK5030DPD-01#J2
Renesas Electronics America
RJK5030DPD-02#J2
Renesas Electronics America
XCVU080-2FFVD1517E
Xilinx Inc.
AGL030V2-CSG81
Microsemi Corporation
MPF300T-1FCG484I
Microsemi Corporation
5SGXMA5N2F40C2LN
Intel
5SGXMA7N3F45I3LN
Intel
5SGXEB6R3F43C2L
Intel
XC2VP7-7FF672C
Xilinx Inc.
XC7A12T-1CPG238C
Xilinx Inc.
XC7S25-2CSGA324I
Xilinx Inc.
LFE2M50SE-6FN484I
Lattice Semiconductor Corporation