Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SIRA12BDP-T1-GE3
Herstellerteilenummer | SIRA12BDP-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIRA12BDP-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® Gen IV |
SIRA12BDP-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 30V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 27A (Ta), 60A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 10A, 10V |
Vgs (th) (Max) @ Id | 2.4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 32nC @ 10V |
Vgs (Max) | +20V, -16V |
Eingangskapazität (Ciss) (Max) @ Vds | 1470pF @ 15V |
FET-Funktion | - |
Verlustleistung (max.) | 5W (Ta), 38W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Paket / fall | PowerPAK® SO-8 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIRA12BDP-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIRA12BDP-T1-GE3-FT |
SI7370DP-T1-GE3
Vishay Siliconix
SI7434DP-T1-GE3
Vishay Siliconix
SI7478DP-T1-E3
Vishay Siliconix
SI7489DP-T1-E3
Vishay Siliconix
SI7884BDP-T1-E3
Vishay Siliconix
SI7884BDP-T1-GE3
Vishay Siliconix
SIR158DP-T1-GE3
Vishay Siliconix
SIR404DP-T1-GE3
Vishay Siliconix
SIR468DP-T1-GE3
Vishay Siliconix
SIR668ADP-T1-RE3
Vishay Siliconix
XA3S500E-4FTG256I
Xilinx Inc.
XA6SLX25T-3FGG484Q
Xilinx Inc.
A54SX32A-FGG484
Microsemi Corporation
APA300-BGG456M
Microsemi Corporation
A54SX16A-FGG256I
Microsemi Corporation
AT40K20-2AQC
Microchip Technology
EP2S30F672C4
Intel
10M40DCF672C7G
Intel
A42MX16-3PQ100
Microsemi Corporation
EP4CGX22CF19C6N
Intel