Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SIRA58DP-T1-GE3
Herstellerteilenummer | SIRA58DP-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SIRA58DP-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® |
SIRA58DP-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 60A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.65 mOhm @ 15A, 10V |
Vgs (th) (Max) @ Id | 2.4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 75nC @ 10V |
Vgs (Max) | +20V, -16V |
Eingangskapazität (Ciss) (Max) @ Vds | 3750pF @ 20V |
FET-Funktion | - |
Verlustleistung (max.) | 27.7W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Paket / fall | PowerPAK® SO-8 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SIRA58DP-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SIRA58DP-T1-GE3-FT |
SI7742DP-T1-GE3
Vishay Siliconix
SI7748DP-T1-GE3
Vishay Siliconix
SI7758DP-T1-GE3
Vishay Siliconix
SI7774DP-T1-GE3
Vishay Siliconix
SI7784DP-T1-GE3
Vishay Siliconix
SI7788DP-T1-GE3
Vishay Siliconix
SI7790DP-T1-GE3
Vishay Siliconix
SI7792DP-T1-GE3
Vishay Siliconix
SI7794DP-T1-GE3
Vishay Siliconix
SI7840BDP-T1-E3
Vishay Siliconix
XC2VP4-6FGG256C
Xilinx Inc.
XC4052XL-3HQ304C
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
M1A3P600-1FGG484
Microsemi Corporation
A42MX36-PQ208I
Microsemi Corporation
M2GL090TS-1FGG676I
Microsemi Corporation
LFEC10E-4QN208I
Lattice Semiconductor Corporation
EP1K100QC208-3N
Intel
EP4SGX180FF35C2XN
Intel
EP1SGX25DF1020C6
Intel