Zuhause / Produkte / Diskrete Halbleiterprodukte / Transistoren - FETs, MOSFETs - einzeln / SISA72ADN-T1-GE3
Herstellerteilenummer | SISA72ADN-T1-GE3 |
---|---|
Zukünftige Teilenummer | FT-SISA72ADN-T1-GE3 |
SPQ / MOQ | kontaktiere uns |
Verpackungsmaterial | Reel/Tray/Tube/Others |
Serie | TrenchFET® Gen IV |
SISA72ADN-T1-GE3 Status (Lebenszyklus) | Auf Lager |
Teilestatus | Active |
FET-Typ | N-Channel |
Technologie | MOSFET (Metal Oxide) |
Drain-Source-Spannung (Vdss) | 40V |
Strom - kontinuierliche Entleerung (Id) bei 25 ° C | 25.4A (Ta), 94A (Tc) |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.25 mOhm @ 10A, 10V |
Vgs (th) (Max) @ Id | 2.4V @ 250µA |
Gateladung (Qg) (Max) @ Vgs | 50nC @ 10V |
Vgs (Max) | +20V, -16V |
Eingangskapazität (Ciss) (Max) @ Vds | 2530pF @ 20V |
FET-Funktion | - |
Verlustleistung (max.) | 3.7W (Ta), 52W (Tc) |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8 |
Paket / fall | PowerPAK® 1212-8 |
Herkunftsland | USA/JAPAN/MALAYSIA/MEXICO/CN |
SISA72ADN-T1-GE3 Gewicht | kontaktiere uns |
Ersatzteilnummer | SISA72ADN-T1-GE3-FT |
SIS184DN-T1-GE3
Vishay Siliconix
SIS322DNT-T1-GE3
Vishay Siliconix
SIS606BDN-T1-GE3
Vishay Siliconix
SISA10DN-T1-GE3
Vishay Siliconix
SISA12ADN-T1-GE3
Vishay Siliconix
SISA88DN-T1-GE3
Vishay Siliconix
SISS27ADN-T1-GE3
Vishay Siliconix
SISS28DN-T1-GE3
Vishay Siliconix
SI7104DN-T1-E3
Vishay Siliconix
SI7104DN-T1-GE3
Vishay Siliconix
XC3S400-4TQG144C
Xilinx Inc.
XC2V1500-4FGG676I
Xilinx Inc.
APA450-BGG456
Microsemi Corporation
AGLN030V2-ZVQG100I
Microsemi Corporation
10M08SAU169A7G
Intel
5SGXEB5R3F43C3N
Intel
A42MX24-1TQG176
Microsemi Corporation
APA150-FGG144A
Microsemi Corporation
EP4SGX230DF29C3NES
Intel
EP20K1000CF33C7N
Intel